Standalone hybrid generation system for the remote area of Thar, Pakistan
The IGBT turns on when the collector-emitter voltage is positive and greater than Vf and a positive
signal is applied at the gate input (g > 0). It turns off when the collector-emitter voltage
is positive and
a 0 signal is applied at the gate input (g = 0).
The IGBT device is in the off state when the collector-emitter voltage is negative.
Note that many
commercial IGBTs do not have the reverse blocking capability. Therefore, they are usually used with
an antiparallel diode.
The IGBT block contains a series Rs-Cs snubber circuit, which is connected in parallel with the IGBT
device (between terminals C and E).
The turnoff characteristic of the IGBT model is approximated by two segments. When the gate signal
falls to 0, the collector current decreases from Imax to 0.1 Imax during the fall time (Tf), and then
from 0.1 Imax to 0 during the tail time (Tt).
Dialog Box and Parameters
Standalone hybrid generation system for the remote area of Thar, Pakistan
Resistance Ron
The internal resistance Ron, in ohms (Ω). The Resistance Ron parameter cannot be set to 0 when the
Inductance Lon parameter is set to 0.
Inductance Lon
The internal inductance Lon, in henries (H). The Inductance Lon parameter is normally set to 0 except
when the Resistance Ron parameter is set to 0.
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