Standalone hybrid generation system for the remote area of Thar, Pakistan
Rotor type
Allow you to select between the Salient-pole and the Round (cylindrical) rotor. This parameter is only
visible when the Number of phases parameter is set to 3 and the Back EMF waveform parameter is set
to Sinusoidal.
Mechanical input
Allows you to select either the torque applied to the shaft or the rotor speed
as the Simulink signal
applied to the block's input.
Select Torque Tm to specify a torque input, in N.m., and change labeling of the block's input to Tm.
The machine speed is determined by the machine Inertia J and by the difference between the applied
mechanical torque Tm and the internal electromagnetic torque Te.
The sign convention for the
mechanical torque is the following:
when the speed is positive, a positive
torque signal indicates
motor mode and a negative signal indicates generator mode.
Select Speed w to specify a speed input, in rad/s, and change labeling of the block's input to w. The
machine speed is imposed and the mechanical part of the model (Inertia J) is ignored. Using the speed
as the mechanical input allows modeling a mechanical coupling
between two machines and
interfacing with SimMechanics and SimDriveline models.
The next figure indicates how to model a stiff shaft interconnection in
a motor-generator set when
friction torque is ignored in machine 2. The speed output of machine 1 (motor)
is connected to the
speed input of machine 2 (generator), while machine 2 electromagnetic torque output Te is applied to
the mechanical torque input Tm of machine 1. The Kw factor takes into account speed units of both
machines (pu or rad/s) and gearbox ratio w2/w1. The KT factor takes into account torque units of both
machines (pu or N.m) and machine ratings. Also, as the inertia J2 is ignored in machine 2, J2 referred
to machine 1 speed must be added to machine 1 inertia J1 [35].
2.9.5. MOSFET
The metal-oxide semiconductor field-effect transistor (MOSFET)
is a semiconductor device
controllable by the gate signal (g > 0). The MOSFET device is connected in parallel with an internal
diode that turns on when the MOSFET device is reverse biased (Vds < 0) and no gate signal is applied
(g=0). The model is simulated by an ideal switch controlled by a logical signal (g > 0 or g = 0), with a
diode connected in parallel [35].