An Introduction to mems (Micro-electromechanical Systems)



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an-introduction-to-mems

An Introduction to MEMS 

 

 



Prime Faraday Technology Watch – January 2002 

31

 



4.1 Mechanical Transducers 

4.1.1  Mechanical Sensors 

 

There is a tremendous variety of direct mechanical sensors that have been or could be 



micromachined depending on their sensing mechanism (usually piezoresistive, piezoelectric 

or capacitive) and the parameters sensed (typically strain, force and displacement). 

 

i) Piezoresistive 



sensors 

As a result of the piezoresistive effect (defined as the change in resistivity of the material with 

applied strain), changes in gauge dimension result in proportional changes in resistance in the 

sensor.  The piezoresistive effect in semiconductors is considerably higher than in traditional 

metals, making silicon an excellent strain sensor.  MEMS piezoresistors are readily 

manufactured using bulk silicon doped with p-type or n-type impurities. 

 

ii) Piezoelectric sensors 



Piezoelectric sensors utilize the piezoelectric effect in which an applied strain (or force) on a 

piezoelectric crystal results in a potential difference across the crystal.  Similarly, if the crystal 

is subjected to a potential difference, a displacement, or strain, is produced.  The effect can be 

used to sense mechanical stress (i.e. displacement) and as an actuation mechanism, although 

displacements are small even for large voltages.  Common piezoelectric materials used for 

MEMS applications include quartz, lead zirconate titanate (PZT), polyvinylidene fluoride 

(PVDF) and ZnO, PVDF and ZnO being the most common.  Silicon is not piezoelectric;  

hence a thin film of a suitable material must be deposited on the devices. 

 

iii) Capacitive sensors 



Capacitive (or electrostatic) sensing is one of the most important (and widely used) precision 

sensing mechanisms and includes one or more fixed conducting plates with one or more 

moving conducting plates.  Capacitive sensing relies on the basic parallel-plate capacitor 

equation shown below.  As capacitance is inversely proportional to the distance between the 

plates, sensing of very small displacements is extremely accurate. 

 

d



A

C

r

ε

ε



0

=

  



where: 

0

ε



 = permittivity of free space = 8.854x10

-12


 Fm

-1 


r

ε

 = relative permittivity of material between the plates 



A  = overlapping plate area (m) 

d  = plate separation (m) 

 

iv) Resonant sensors 



MEMS resonant sensors consist of micromachined beams or bridges which are driven to 

vibrate at their resonant frequency.  They can be attached to membranes or designed to adhere 

to a particular substance (as in the case of a biosensor).  Movement of the membrane or 

increased build-up of the binding substance will affect the resonant frequency and can be 

monitored using implanted piezoresistors.   

 

Types of mechanical sensor include: 



a)  Strain gauge - a strain gauge is a conductor or semiconductor that is fabricated on or 

bonded directly to the surface to be measured.  An example of a polysilicon strain sensor 





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